InP: Fe substrate of high reliability 40Gb / s electro-absorption modulator - Optical communication, optical fiber communications, laser -

InP: Fe substrate of high reliability 40Gb / s electro-absorption modulator - Optical communication

, optical fiber communications, laser -

Summary: In the InP: Fe substrate peaks have been made with the exposed ridge Waveguide The electro-absorption Modulator . The cutoff frequency is 40GHz, the extinction ratio is 15dB. Estimated at 25 , the life of 1.7x107 hours.

1. Introduction Electroabsorption (EA) modulators are widely used in optical fiber Communicate System. Using the EA modulator and EA modulator integrated sub- Cloth Feedback laser (EAM-LD) of 10Gb / s optical communication system has entered the practical stage [1]. Increase transmission capacity to meet strong demand, we need to be able to 40Gb / s high-speed optical fiber communication system modulator [2-5]. EA modulator of the modulation speed of the main subject to its Capacitance Restrictions, therefore, modulator, or EA modulator electrodes under the low dielectric constant of common materials such as polyimide, and this board is in semi-insulating substrate made. However, using Polymer Light Semiconductor Equipment Or in the InP: Fe substrate Make The EA modulator reliability was not clear about.

To conduct high-speed transmission, it must reduce the length of the modulator capacitance. However, because of its chips Foot Inch small, bonding and assembly of components very difficult. To address this problem, transparent waveguide can be mounted on both sides of the modulator region. However, to make components into transparent semiconductor assembly process becomes complicated and the parts with the reliability of docking areas still need to be identified.

We have developed using InP: Fe substrate, integrated and transparent waveguide MQW (MQW) EA modulator. Use of semi-insulating substrate, the parasitic capacitance reduced to 0.07pF, also received 40GHz bandwidth. At 0V to-3V operating voltage extinction ratio 15dB. In addition, it is our first report in InP: Fe substrate to produce a reliable EA modulator. Life expectancy at 25 to 1.7x107 hours.

2. The structure and assembly equipment

Absorbing layer Package Including InGaAsP-MQW structure. The length of the modulator region is 75 m. Modulator installed on both sides of the region, two blocks of transparent InGaAsP waveguide. Use of methane and oxygen gas mixture to dry etching can create peak ridge waveguide structure. P electrode and the n electrode are doing the same side of the substrate. The total length of the part is 300 m. Equipment Table Have anti-reflective top coat Film . 3% reflectivity on both sides.

3, at-1V bias voltage, the cut-off frequency of 40GHz, by chipset Resistance And capacitance time constant limit. The capacitance is 0.07pF, serial resistance is 15ohms.

We use the tapered optical fiber for the input and output. The wavelength of 1553nm, 0Vto-3V operating voltage when the measured extinction ratio of 15dB.

4, the reliability To guarantee the InP: Fe substrates for the reliability of EA modulator, we conducted accelerated aging Test . We will define the life of EA modulator for the dark current increase. If the dark current and photocurrent increase as large (about several mA), the absorption layer carrier density becomes larger, EA modulator absorbing layer of the electric field strength will become smaller, chip capacitors become large, this will caused the deterioration of frequency response characteristics.

Aging test temperature is 140 . Welding process used in the bias voltage is-5V. Modulator dark current is 25 ,-3V bias voltage measurement. The number of test chips for six. Figure 3 shows the dark current dependence on aging time. Dark current as small as 0.8 to 3.6 A, and 500 hours of aging time remained stable. Not observed any signs of performance degradation. The device when the device lifetime at 140 3,000 hours or more. Assuming that the device's activation energy of 0.8eV, which for the InP-based optoelectronic Detector It is usually value, estimated life expectancy at 25 1.7x107 hours.

5, conclusions We have developed a transparent integrated waveguide EA modulator. Use of InP: Fe as the substrate, the parasitic capacitance reduced 0.07pF. Been cut-off frequency and 15dB 40GHz extinction ratio. By accelerated aging tests conducted at 25 , life expectancy for the 1.7x107 hours. We believe that the device can be used for products that require high reliability of 40Gb / s optical communication systems.

40Gb/sRZ in more high-speed communication systems such as the use of EA modulators, the need to reduce the parasitic feeder Inductance . This EA modulator have the same side of the substrate electrode and the n p electrode, so the use of coplanar flip-chip feeder connections than the use of n-InP substrate traditional EA modulator is much easier. And may be used in higher speed situations. [Key words]: Optical Communication Optical Fiber Communication Laser Comment Large In Small

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