The World's Lowest Power Loss Came Sic Power Transistor
Power Electronics Research Center, recently in Japan Yamanashi University Graduate School of Medical Engineering Integrated Research Department of the spring
? Yano Research, using self-developed manufacturing process, use the six-crystal SiC (4H-SiC) have successfully tested out with the p + gate area Static Induction Transistors (embedded gate-type SiC-SIT: SiC-Static-Induction-Transistor). The voltage is 700V, resistance to 1.01m cm2, the voltage is 600V ~ 1.2kV switching devices, the realization of the world's smallest resistance. And the last inverter circuit used in Si-IGBT (insulated gate bipolar transistor) than the ability to significantly reduce electricity consumption by 1 / 12.
Embedded gate-type SiC-SIT range of applications including the use of AC100/200V commercial power of home appliances (IH cooking heaters, heat pumps, etc.), uninterruptible power supply (UPS) and other small capacity inverter, using DC300/400C power cars (hybrids, electric cars, fuel cell vehicles, etc.) in the capacity of inverter, for control of large industrial heater large capacity inverter, can be used in decentralized power and solar power and other fields , expects the market size will more than 1 trillion yen. Once put into practical application, It is estimated that by 2020 carbon dioxide emissions could result in Japan to the Japanese in 1990, the total carbon dioxide emissions by 1%, is expected on February 16, 2005 entry into force of the "Kyoto Protocol" under the earth greenhouse gas emissions make a significant contribution.
SiC (silicon carbide) as compared with the silicon energy band gap of about 3 times the insulation breakdown electric field intensity is about 10 times, it has good heat resistance and dielectric resistance, power dissipation small. Present an alternative to silicon power devices Semiconductor Material received widespread attention in the industry across the world are stepping up research and development. The use of SiC components, the static induction transistor (SiC-SIT) as the SiC crystals can take advantage of high electron mobility (up to 900cm2/Vs) characteristics of low-resistance high-speed switching elements, in particular, favored by the industry. The only sales of the market switch element is a SiC semiconductor manufacturers in Germany SIT. Pressure to 1200V, resistance to 12m cm2. SIT performance to improve the key is how to improve the structure of the micro-channel level of technology. The structure of both the past have tried hard to improve the technological level, including the commercially available components can be included, well below the SiC material itself has a limit of the physical characteristics of the performance.
JST and Graduate School, Yamanashi University in order to solve these problems, a fully embedded in the construction of p + gate area (embedded gate-type SiC-SIT). This structure in the formation of source electrode and gate electrode is not required to carry out precise location of proofing, can significantly reduce the unit cell size (unit interval). If using this device structure to improve miniaturization technology, it can increase the amount of current per unit area, lower component of the resistance.
Structure as embedded gate type SIT, silicon materials, Si-SIT program was first proposed, and for a lot of trial. For SiC, the tiny devices to take advantage of to enhance the traditional process to achieve the level of embedded gate type SIT very difficult structure, it has never been tried. This time, through the independent development of new manufacturing process technology, not only the fine structure of embedded gate, but also to achieve ultra-low power consumption of the power transistor.
The production of embedded gate-type SiC-SIT in the voltage? Current characteristics, the gate voltage at 2.5V (VG) and room temperature was 1.01m cm2 ultra-low resistance. Reverse characteristics, the in-12V gate voltage was 700V for voltage characteristics, including the previously reported value of SiC products, including the voltage 600V ~ 1.2kV switching elements, achieving the lowest resistance. Over the past inverter circuit used in silicon power transistors (IGBT) voltage is usually 600V in about 12 ~ 13m cm2 of resistance. By contrast, since resistance is only 1 / 12, it also can significantly reduce power consumption to 1 / 12.
by: heiyou
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