subject: Vacuum Dryer And Spray Dryer [print this page] A vacuum dryer and a way of drying a semiconductor device using the same are provided. Within the existing creation, a vacuum dryer utilizing isopropyl alcohol vapor, including an outer bath, an interior bath, a primary drinking water offer line, a supplementary water provide line, an inner bath drain line, and an outer bath drain line, is offered. Soon after cleaning the inside of in the vacuum dryer, the inner bath is stuffed with the supplied deionized h2o and the deionized water is constantly overflowed. Then, the semiconductor substrate is loaded in to the internal bath with the vacuum dryer to which the deionized is non-stop overflowed. The loaded semiconductor substrate is dried by supplying the isopropyl alcohol vapor towards the internal bath into which the semiconductor substrate is loaded.
A vacuum dryer is obtained by enhancing the above-mentioned IPA vapor dryer. From the drying approach in which the vacuum dryer is employed, the volume of IPA consumed is less than that of the IPA vapor dryer. Consequently, it truly is possible to scale back the diploma of environmental air pollution due to the IPA. What's more, it really is possible to acquire a fantastic drying impact irrespective of the existence in the pattern. However, since the semiconductor product is even more integrated, recontamination by particles within the drying method during which the vacuum dryer is utilised comes into query. Consequently, a way of drying a semiconductor device by which it really is probable to far more stably prevent recontamination by particles is needed.spray dryer.
To realize the first goal, there exists supplied a vacuum dryer, comprising an outer bath, an interior bath situated inside of the outer bath and into which a semiconductor substrate is loaded, a primary water provide line related for the interior bath for supplying deionized water with which the inner bath is crammed, a supplementary water provide line related for the inner bath for supplying added deionized drinking water to your inner bath to overflow the deionized drinking water from your inner bath an interior bath drain line connected to the inner bath for draining the deionized water stuffed within the inner bath, an outer bath drain line related towards the outer bath for draining the deionized drinking water overflowed in the interior bath, as well as a supply pipe linked towards the outer bath for supplying isopropyl alcohol vapor to your semiconductor substrate.
To accomplish your second goal, there exists offered a approach to drying a semiconductor device. Inside the technique, deionized water is provided to an inner bath of the vacuum dryer utilizing isopropyl alcohol vapor, composed of an outer bath, an interior bath, a primary drinking water offer line, to fill the interior bath along with a supplementary h2o supply line connected to the main h2o offer line. The deionized drinking water is continuously provided for the internal bath through the supplementary h2o offer line to overflow the deionized drinking water from the inner bath to the outer bath. A semiconductor substrate is loaded into the interior bath with the vacuum drying equipment from which the deionized water is continuously overflowed. The loaded semiconductor substrate is dried by supplying IPA vapor towards the interior bath into which the semiconductor substrate is loaded.
