To achieve the second objective, there is provided a method of drying a semiconductor device
. In the method, deionized water is continuously supplied to an inner bath of a vacuum dryer using IPA vapor comprised of an outer bath, an inner bath, and deionized water supplied through water supply lines to fill the inner bath with the deionized water, such that the deionized water is continuously overflowed from the inner bath to the outer bath. A semiconductor substrate is loaded into the inner bath-from which the deionized water is continuously overflowed. The loaded semiconductor substrate is dried by supplying the isopropyl alcohol vapor to the inner bath into which the semiconductor substrate is loaded.